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1

Electrical and Optical Characterization of Thin Semiconductor Layers for Advanced ULSI Devices

Simoen, Eddy, Claeys, C., Gaubas, Eugenijus, Rafí, J.M.

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 706 KB

english, 2005

2

On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium

Gaubas, Eugenijus, Vanhellemont, Jan, Simoen, Eddy, Theuwis, Antoon, Clauws, Paul

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 250 KB

english, 2007

3

Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers

Gaubas, Eugenijus, Simoen, Eddy, Claeys, C., Poyai, A.

Journal:

Solid State Phenomena

Year:

1999

File:

PDF, 402 KB

1999

4

On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers

Simoen, Eddy, Eneman, G., Shamuilia, Sheron, Simons, V., Gaubas, Eugenijus, Delhougne, R., Loo, R., De Meyer, K., Claeys, C.

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 649 KB

english, 2005

5

Nondestructive Characterisation of MOVPE-Grown CdTe and ZnTe Epilayers by Picosecond and Nanosecond 'Excite-Probe' Techniques

Gaubas, Eugenijus, Mizeikis, V., Bastienė, L., Jarašiūnas, Kestutis, Lovergine, N., Mancini, Anna Maria, Prete, P., Subačius, L.

Journal:

Materials Science Forum

Year:

1999

File:

PDF, 360 KB

1999

6

Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments

Vanhellemont, Jan, Kissinger, G., Clauws, Paul, Kaniava, A., Libezny, M., Gaubas, Eugenijus, Simoen, Eddy, Richter, Hans, Claeys, C.

Journal:

Solid State Phenomena

Year:

1996

File:

PDF, 443 KB

1996

7

Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements

Gaubas, Eugenijus, Vanhellemont, Jan, Simoen, Eddy, Claeys, C., Seifert, Winfried

Journal:

Solid State Phenomena

Year:

1997

Language:

english

File:

PDF, 458 KB

english, 1997

8

Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers

Vaitkus, Juozas V., Gaubas, Eugenijus, Sakai, Shiro, Lacroix, Yves, Wang, Tao, Smith, Kenway M., Rahman, Mahfuzur, Cunningham, William

Journal:

Solid State Phenomena

Year:

2003

Language:

english

File:

PDF, 281 KB

english, 2003

9

Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium

Gaubas, Eugenijus, Vanhellemont, Jan

Journal:

Solid State Phenomena

Year:

2008

Language:

english

File:

PDF, 631 KB

english, 2008

10

Characterisation of High-Energy Proton Irradiation Induced Recombination Centers in Silicon

Kaniava, A., Vanhellemont, Jan, Simoen, Eddy, Claeys, C., Gaubas, Eugenijus

Journal:

Solid State Phenomena

Year:

1996

File:

PDF, 388 KB

1996

11

Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge

Uleckas, Aurimas, Gaubas, Eugenijus, Ceponis, Tomas, Zilinskas, Kestutis, Grigonis, Rimas, Sirutkaitis, Valdas, Vanhellemont, Jan

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 416 KB

english, 2011

12

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Uleckas, Aurimas, Gaubas, Eugenijus, Rafi, Joan Marc, Chen, Jiahe, Yang, De Ren, Ohyama, Hidenori, Simoen, Eddy, Vanhellemont, Jan

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 987 KB

english, 2011

13

Spectroscopy of Technological Defects in Si Solar Cells by Analysis of Temperature Dependent Generation Currents

PAVLOV, Jevgenij, BAJARŪNAS, Darius, ČEPONIS, Tomas, GAUBAS, Eugenijus, MEŠKAUSKAITĖ, Dovilė

Journal:

Materials Science (MEDŽIAGOTYRA)

Year:

2014

Language:

english

File:

PDF, 2.80 MB

english, 2014

14

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Gaubas, Eugenijus, Brytavskyi, Ievgen, Ceponis, Tomas, Kalendra, Vidmantas, Tekorius, Audrius

Journal:

Year:

2012

Language:

english

File:

PDF, 429 KB

english, 2012

15

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Comparative Study of Carrier Lifetime Variations with Doping in Si and Ge

Vanhellemont, Jan, Gaubas, Eugenijus

Year:

2006

Language:

english

File:

PDF, 1.20 MB

english, 2006

16

Currents Induced by Injected Charge in Junction Detectors

Gaubas, Eugenijus, Ceponis, Tomas, Kalesinskas, Vidas

Journal:

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

17

Simulations of Operation Dynamics of Different Type GaN Particle Sensors

Gaubas, Eugenijus, Ceponis, Tomas, Kalesinskas, Vidas, Pavlov, Jevgenij, Vysniauskas, Juozas

Journal:

Year:

2015

Language:

english

File:

PDF, 2.92 MB

english, 2015

18

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

Gaubas, Eugenijus, Ceponis, Tomas, Dobrovolskas, Darius, Malinauskas, Tadas, Meskauskaite, Dovile, Miasojedovas, Saulius, Mickevicius, Juras, Pavlov, Jevgenij, Rumbauskas, Vytautas, Simoen, Eddy, Zhao

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 2.57 MB

english, 2017

19

Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si

Gaubas, Eugenijus, Ceponis, Tomas, Mickevicius, Juras, Pavlov, Jevgenij, Rumbauskas, Vytautas, Velicka, Martynas, Simoen, Eddy, Zhao, Ming

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 2.27 MB

english, 2018

20

Study of Charge Carrier Transport in GaN Sensors

Gaubas, Eugenijus, Ceponis, Tomas, Kuokstis, Edmundas, Meskauskaite, Dovile, Pavlov, Jevgenij, Reklaitis, Ignas

Journal:

Year:

2016

Language:

english

File:

PDF, 1.80 MB

english, 2016

21

Profiling of Current Transients in Capacitor Type Diamond Sensors

Gaubas, Eugenijus, Ceponis, Tomas, Meskauskaite, Dovile, Kazuchits, Nikolai

Journal:

Year:

2015

Language:

english

File:

PDF, 6.76 MB

english, 2015

22

Electrical characterization of HVPE GaN containing different concentrations of carbon dopants

Gaubas, Eugenijus, Ceponis, Tomas, Deveikis, Laimonas, Meskauskaite, Dovile, Pavlov, Jevgenij, Rumbauskas, Vytautas, Bockowski, Michal, Lucznik, Boleslaw

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 648 KB

english, 2018

23

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

Makarenko, Leonid F., Lastovski, Stanislav B., Yakushevich, Hanna S., Gaubas, Eugenijus, Pavlov, Jevgenij, Kozlovski, Vitali V., Moll, Michael, Pintilie, Ioana

Journal:

physica status solidi (a)

Year:

2019

Language:

english

File:

PDF, 717 KB

english, 2019

24

Study of Radiation-Induced Defects in p-Type Si1âxGex Diodes before and after Annealing

Ceponis, Tomas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Gaubas, Eugenijus

Journal:

Year:

2020

File:

PDF, 1.86 MB

2020

25

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors

Ceponis, Tomas, Deveikis, Laimonas, Lastovskii, Stanislau, Makarenko, Leonid, Pavlov, Jevgenij, Pukas, Kornelijus, Rumbauskas, Vytautas, Gaubas, Eugenijus

Journal:

Year:

2020

File:

PDF, 809 KB

2020